Ixys Introduces 1200V SOT-227 SiC Schottky Diodes

Designed to enable higher power in switching and control for inverters, UPSs and rapid chargers

Ixys, a specialist in power semiconductors and IC technologies for power conversion and motor control, has announced the availability of the DCG85X1200NA and the DCG100X1200NA, both dual 1200V rated SiC Schottky diodes in SOT-227 packages, the MiniBLOC, fully isolated.

The DCG85X1200NA and the DCG100X1200NA both offer two SiC Schottky diodes with an average forward current of 43 Amps and 49 Amps, respectively, at 80C case temperature. Both are rated at 1200V blocking voltage in MiniBLOC SOT-227 package featuring 3kV isolation to heat sink and low thermal impedance based on Ixys’ proprietary technology. Both products offer higher power density, lower assembly cost and smaller size.

“With this addition to our fast diode portfolio, Ixys enables higher power in switching and control for inverters, UPSs and rapid charger solutions,” commented Elmar Wisotzki, director of technology for Ixys Germany. “The devices use our matching assembly technology to harvest the full advantage of the Ixys’ SiC power diodes. Ixys also offers the best driver ICs, such as the IXDD609SI, for high power SiC MOSFETs. Thus, we offer the total solution to our customers to improve efficiency at best performance over cost ratio.”

Both diodes are electrically isolated from each other inside the package, allowing it to be free to connect to a common source or phase leg configuration. Additionally, the positive temperature coefficient of the forward voltage supports paralleling options for higher power applications.

Typical applications, among others, are high efficient DC-DC converters, solar inverters, uninterruptible power supplies (UPS) systems and rapid-charger solutions.

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