Mouser spotlights Nexperia power chips
Latest devices include GaN FETs, energy harvesting PMICs and battery booster chips
Distributor Mouser Electronics has announced that it is stocking some of the latest power chips from Nexperia including GaN FETs, energy harvesting PMICs and battery booster chips.
New devices include Nexperia eMode GaN FETs, which offer voltage ranges of 100V to 650V. These FETs are said to deliver fast transition and switching capability and excellent power efficiency with low QC and QOSS values. Nexperia Low Voltage (< 200V) eMode GaN FETs enable faster charging for e-mobility and wired / wireless changing systems, as well as significant space and BOM savings in LiDAR and low noise in Class D audio amplifiers.
Other new products available include the Nexperia NEH2000BYJ energy harvesting power management integrated circuit (PMIC). This high-performance energy harvesting solution for low-power applications collects energy generated by ambient sources, such as light, to charge storage elements such as rechargeable batteries or hybrid supercapacitors– thereby eliminating the need for battery swaps.
Pictured above are Nexperia's NBM5100A/B and NBM7100A/B battery life booster ICs designed to remove the limitations associated with coin cell batteries to enhance performance. These are designed to extend the life of a typical non-rechargeable lithium coin cell battery by up to 10x compared to competing solutions while also increasing its peak output current capability by up to 25x. The NBM5100A and NBM7100A offer support for I2C interfaces, and the NBM5100B and NBM7100B provide support for SPI interfaces, allowing for design flexibility.
Mouser says it currently stocks over 13,000 Nexperia parts including diodes, bipolar transistors, electrostatic discharge (ESD) protection devices, MOSFETs, GaN FETs and analogue and logic ICs that meet stringent automotive industry standards
